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The ECH8410-TL-H is an N-channel silicon MOSFET from Onsemi, packaged in an 8-pin ECH configuration. It features a drain-source breakdown voltage of 30V and supports a continuous drain current of 12A. The device exhibits a low on-resistance of 10 mOhms, facilitating efficient power handling. Designed for compatibility with 4V drive logic, it integrates a protection diode within the structure. The component is supplied in reel packaging and complies with halogen-free standards.
Verify manufacturing status as sources indicate this product may be no longer manufactured or available through specific distributors like Rochester Electronics. Confirm package type and tape/reel specifications directly with authorized suppliers to ensure compatibility with existing assembly processes. Check for valid replacement part numbers if original supply is discontinued.
Select this component for applications requiring a 30V N-channel MOSFET with high current capability of 12A. The low on-resistance makes it suitable for efficiency-critical designs. Ensure the driving circuit supports the specified 4V logic level. Verify that the 8-pin ECH package fits the board layout constraints and thermal requirements of the target system.
This component belongs to Onsemi's single FET MOSFET category. It is designed for general-purpose switching applications where low voltage operation and high current density are required. The ECH package provides a compact form factor suitable for space-constrained electronic designs.
Check for direct substitutes from Onsemi or other manufacturers with matching 30V, 12A, and 10 mOhms specifications. Verify pinout compatibility and package dimensions before substitution.