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Product Detailed Parameters
- Description：MOSFET N-CH 20V 9A 8ECH
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：16mOhm @ 4A, 4V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：21 nC @ 4 V
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：1740 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-ECH
- Package / Case：8-SMD, Flat Leads
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Overview
The ECH8411-TL-E is an N-Channel Silicon MOSFET manufactured by onsemi. It features a 20 V drain-source voltage rating and supports a continuous drain current of 9 A at ambient temperature. The device is designed for surface mount applications, utilizing an 8-ECH package configuration. Thermal performance is characterized by a power dissipation capacity of 1.4 W at ambient conditions. This component belongs to the single FET category within the manufacturer's discrete semiconductor portfolio.
Feature Summary
- N-channel silicon construction
- Surface mount packaging
- Single transistor configuration
Applications
- General purpose switching
- Power management circuits
- Low voltage load control
Procurement Notes
Verify the specific suffix TL-E against official datasheets to confirm pinout and thermal specifications. Confirm RoHS compliance status through the manufacturer's latest documentation. Ensure the 8-ECH package dimensions match your PCB footprint requirements before finalizing procurement decisions.
Selection Notes
Select this component when a low-voltage, high-current N-channel solution is required in a compact surface mount form factor. Evaluate the 20 V rating against system voltage peaks. Consider the 9 A current capability relative to thermal constraints in the target application environment.
Part Context
This part is categorized under Single FETs and MOSFETs within onsemi's discrete devices lineup. It serves as a fundamental building block for power switching applications requiring robust N-channel performance in small packages, distinct from integrated driver or logic IC families.
Replacement Considerations
Cross-reference with other 20 V, 9 A N-channel MOSFETs in 8-pin packages. Verify compatibility with existing gate drive voltages and thermal management strategies when substituting.
