ECH8601M-C-TL-HX

Description：MOSFET N-CH 24V 8A ECH8
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)

SKU:369fa450d39d Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 24V 8A ECH8
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：8A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-ECH
Package / Case：8-SMD, Flat Leads

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ECH8601M-C-TL-HX

Overview

The ECH8601M-C-TL-HX is an N-channel power MOSFET from onsemi, designed for low-voltage applications. It features a drain-to-source voltage (VDSS) of 24V and a continuous drain current (ID) of 8A at 25°C. The device exhibits a maximum static drain-to-source on-state resistance (RDS(on)) of 23mΩ. It supports a 2.5V drive level and includes built-in gate protection and a common-drain type configuration with an integrated protection diode.

Feature Summary

Low on-resistance for efficient power switching
Compatible with 2.5V drive logic levels
Integrated gate protection resistor
Built-in protection diode in common-drain configuration

Applications

Li-ion battery charging switch circuits
Battery discharging switch applications
Low-voltage power management systems

Procurement Notes

Verify the exact suffix 'TL-HX' against official onsemi documentation to confirm tape-and-reel packaging specifications and marking codes. Ensure compatibility with the specified ECH8 package dimensions and JEDEC standards. Confirm RoHS compliance status through official material composition documents prior to integration.

Selection Notes

Select this component for applications requiring a compact N-channel MOSFET with low RDS(on) and 2.5V drive capability. The integrated protection features simplify circuit design for battery management systems. Verify thermal dissipation requirements against the 1.5W allowable power dissipation rating under specific mounting conditions.

Part Context

This part belongs to onsemi's discrete semiconductor transistor category, specifically within the power MOSFET segment. It is engineered for high-efficiency switching in consumer electronics and portable devices where space constraints and low voltage operation are critical design parameters.

Replacement Considerations

Consult official substitution guides for equivalent N-channel MOSFETs with matching 24V VDSS and 8A ID ratings. Verify pinout compatibility with the ECH8 package before replacing.