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The onsemi ECH8601R-TL-EX is an N-channel enhancement mode MOSFET array housed in an 8-pin ECH surface-mount package. It features a maximum drain-source voltage of 24 V and a continuous drain current of 8 A at 25°C. The device exhibits a typical on-resistance of 23 mΩ, supporting efficient power switching. Designed for low-voltage applications, it includes built-in gate protection resistors and operates within a junction temperature range of -55°C to +150°C. The component is manufactured using silicon technology and complies with halogen-free standards.
Verify the specific suffix EX against official datasheets to confirm tape-and-reel packaging specifications. Ensure compatibility with standard SMD reflow profiles. Confirm RoHS and REACH status through manufacturer documentation prior to integration into production lines.
Select this component for applications requiring dual N-channel isolation in a compact footprint. The 23 mΩ on-resistance minimizes conduction losses. Verify thermal dissipation requirements against the 1.5 W power rating when mounted on recommended ceramic substrates.
This part belongs to the ECH series of dual MOSFET arrays designed for portable electronics. It shares the 8-ECH package form factor with other onsemi devices like the ECH8601M, offering a standardized solution for space-constrained power management designs.
The ECH8601M serves as a direct functional substitute within the same series. Verify pinout compatibility and electrical parameters such as Rds(on) and Vgs thresholds before implementation.