SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The ECH8602M-TL-H is an N-channel power MOSFET manufactured by onsemi, housed in the compact ECH surface-mount package. It features a drain-source voltage rating of 24 V and a continuous drain current capacity of 8 A. The device exhibits a low static drain-to-source on-state resistance of 23 mΩ, facilitating efficient power switching with minimal conduction losses. Designed for high-density applications, it integrates built-in gate protection resistors and includes a common-drain configuration suitable for battery management systems.
Verify the specific suffix TL-H against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications. Ensure the component matches the exact ECH8602M part number rather than similar variants like ECH8601M, as pinouts or internal configurations may differ between models within the same series.
Select this component for applications requiring a compact N-channel solution with integrated gate protection. The 24 V rating and 23 mΩ Rds(on) make it appropriate for low-voltage DC-DC converters or load switches where space constraints are critical. Confirm that the operating voltage remains within the ±12 V gate-source limits.
This part belongs to onsemi's ECH series of dual-chip or single-chip power MOSFETs designed for portable electronics. The ECH package provides a small footprint compared to traditional TO-252 or DPAK packages, allowing for higher circuit density in mobile devices and consumer electronics where board real estate is limited.
Direct substitutes include other 24 V, 8 A N-channel MOSFETs in the ECH package from onsemi, such as the ECH8601M, provided the electrical characteristics and pinout compatibility are verified. Cross-brand replacements must match the 23 mΩ Rds(on) and 24 V Vdss ratings while fitting the ECH mechanical dimensions.