ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：NCH+NCH 2.5V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The ECH8602R-TL-H is an N-channel MOSFET array manufactured by onsemi. It features a dual configuration with two independent N-channel transistors integrated into a single package. The device is designed for low-voltage applications, supporting a 2.5V drive series operation. It utilizes surface-mount technology in a compact form factor suitable for space-constrained circuit designs.
Feature Summary
- Dual N-channel MOSFET array configuration
- Optimized for 2.5V logic drive compatibility
- Surface-mount packaging for automated assembly
Applications
- Low-voltage power switching circuits
- Battery protection modules
- Portable electronic device power management
Procurement Notes
Verify the specific suffix 'TL-H' against the manufacturer's latest datasheet to confirm tape and reel specifications and lead frame material. Ensure that the ordering part number matches the exact electrical characteristics required for the target application, as minor suffix variations may indicate differences in packaging or compliance status.
Selection Notes
Select this component when a dual N-channel MOSFET solution is required for low-side switching or load balancing in 2.5V driven systems. Consider the thermal performance of the specific package type relative to the expected current load. Verify that the gate threshold voltage aligns with the control logic levels of the driving microcontroller or driver IC.
Part Context
This part belongs to onsemi's discrete semiconductor portfolio, specifically within the MOSFET and FET arrays category. It serves as a compact alternative to using two separate discrete MOSFETs, offering reduced board space and simplified layout requirements for designers working with low-voltage digital interfaces.
Replacement Considerations
Cross-reference with other onsemi dual N-channel MOSFET arrays such as the ECH8602M series for potential pin-compatible alternatives. Verify that any substitute maintains identical gate drive voltage requirements and package dimensions to ensure seamless integration without redesigning the PCB footprint.
