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Product Detailed Parameters
- Description：MOSFET N-CH
- Series：*
- Mfr：Sanyo
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The ECH8604-TL-E-SY is an N-channel MOSFET array manufactured by Sanyo. It features a dual configuration within a single package, designed for general-purpose switching applications. The device utilizes silicon technology and operates in enhancement mode. Key electrical characteristics include a drain-to-source voltage rating of 30V and a continuous drain current capacity of 4A. The on-resistance is specified at 67mΩ. The component is housed in a surface-mount package with multiple pins, suitable for automated assembly processes.
Feature Summary
- Dual N-channel MOSFET configuration for compact circuit design
- Low on-resistance for efficient power handling
- Ultrahigh-speed switching capability
- Compatible with 4V drive logic levels
Applications
- Motor drive circuits
- DC/DC converter modules
- General-purpose switching devices
- Power management systems
Procurement Notes
Verify the specific suffix 'E-SY' against official Sanyo documentation to confirm tape-and-reel packaging and lead-free compliance status. Ensure the ordering number matches EN8589 or equivalent official references. Cross-reference pinout diagrams with target PCB layout requirements. Confirm RoHS directive adherence through manufacturer certificates rather than distributor claims. Validate absolute maximum ratings against system stress conditions before integration.
Selection Notes
Select this component for applications requiring dual N-channel switching in a small footprint. The 67mΩ on-resistance supports moderate current loads up to 4A. Consider the 30V drain-to-source voltage limit when designing power stages. The 4V drive compatibility allows interface with standard logic controllers. Evaluate thermal dissipation requirements based on the specific package type and ambient operating conditions.
Part Context
This part belongs to Sanyo's series of silicon MOSFET arrays. It complements other models like the ECH8605 and ECH8619, which offer different voltage and current ratings. The ECH8604 variant specifically targets low-voltage, medium-current switching tasks. Its dual structure distinguishes it from single-element FETs like the 2SJ664, offering integrated solutions for bridge or half-bridge configurations.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source data. Verify functional equivalence with other Sanyo dual N-channel MOSFETs if direct replacement is required. Check pinout compatibility and electrical parameter margins before substituting with generic market alternatives.
