ECH8606-TL-H

$0.26

Description：NCH+NCH 4V DRIVE SERIES
Series：*

SKU:b87c350c2737 Category: FET, MOSFET Arrays Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：NCH+NCH 4V DRIVE SERIES
Series：*
Mfr：onsemi
Package：Bulk
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

Download product information

ECH8606-TL-H

Overview

The onsemi ECH8606-TL-H is a dual N-channel enhancement mode MOSFET array housed in an 8-ECH surface-mount package. It features a maximum drain-source voltage of 30 V and a continuous drain current of 4.5 A. The device includes two isolated chips with a maximum power dissipation of 1.3 W. Key electrical parameters include a maximum gate threshold voltage of 2.6 V, a maximum gate-source voltage range of -20 V to +20 V, and a typical gate charge of 10 nC at 10 V. The component operates at a maximum junction temperature of +150 °C.

Feature Summary

Dual N-channel configuration providing two independent switching elements within a single compact package.
Enhanced mode operation optimized for low-voltage drive applications with specified threshold characteristics.

Applications

Low-side switching in DC-DC converter circuits
Power management modules requiring compact dual-channel isolation
Battery protection systems utilizing small form-factor packaging

Procurement Notes

Verify the specific ordering suffix and manufacturer lot codes against official onsemi documentation to ensure component authenticity. Confirm that the received parts match the exact 8-ECH package dimensions and pinout specifications required for your PCB layout. Cross-reference datasheet revisions to validate electrical parameter consistency before integration into production designs.

Selection Notes

Select this component when a dual N-channel topology is required within strict spatial constraints defined by the 8-ECH footprint. Ensure the application voltage remains within the 30 V limit and thermal design accommodates the 1.3 W dissipation rating. Verify that the gate drive circuitry can reliably switch the specified threshold voltage for optimal performance.

Part Context

This part belongs to the onsemi ECH series of surface-mount MOSFET arrays. These components are designed for high-density power electronics where multiple switching elements are needed in minimal space. The series supports various voltage and current ratings tailored for modern portable and industrial power supply architectures.