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Product Detailed Parameters
- Description：PCH+PCH 4V DRIVE SERIES
- Series：*
- Mfr：onsemi
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The ECH8617-TL-E is a dual N-channel MOSFET array manufactured by onsemi, designed for surface-mount applications. It operates with a drain-to-source voltage (Vdss) of 35V and supports a continuous drain current (Id) of 4.5A at 25°C. The device features a maximum on-resistance (Rds On) of 59mΩ at 2A and 10V gate-source voltage. Gate threshold voltage (Vgs(th)) is specified at 4V max with 250µA drain current. Key electrical parameters include a maximum gate charge (Qg) of 4.5nC at 10V and input capacitance (Ciss) of 230pF at 20V. The component is rated for a maximum power dissipation of 1.5W and functions within a junction temperature range up to 150°C. It utilizes an 8-ECH package.
Feature Summary
- Dual N-channel configuration for integrated switching solutions
- Logic-level gate drive capability for efficient control
- Compact surface-mount packaging for space-constrained designs
Applications
- Low-voltage DC-DC converter circuits
- Load switching in portable electronic devices
- Battery protection modules
Procurement Notes
Verify the specific suffix -E against official onsemi documentation to confirm environmental compliance or tape-and-reel specifications. Ensure the ordering part number matches the exact package variant required for the PCB footprint. Cross-reference the datasheet revision date to confirm parameter stability before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel MOSFET is required for 35V logic-level applications. Verify that the 4.5A continuous current rating and 59mΩ Rds On meet the thermal and efficiency requirements of the target circuit. Confirm compatibility with the 8-ECH package dimensions during the layout phase.
Part Context
This device belongs to onsemi's discrete semiconductor product line, specifically within the FET and MOSFET arrays category. It is engineered for high-density power management applications where small form factors and dual-channel integration are necessary. The product is positioned as an active component for modern consumer and industrial electronics.
Replacement Considerations
Consult onsemi's official substitution guide for verified alternatives. Ensure any replacement maintains the 35V Vdss, 4.5A Id, and 8-ECH package constraints. Do not assume pinout compatibility without verifying the specific manufacturer's datasheet for the candidate substitute part.
