ECH8619-TL-E

Overview

The ECH8619-TL-E is a dual-channel silicon MOSFET array integrating an N-channel and a P-channel device in an 8-ECH surface-mount package. The N-channel unit supports a drain-source voltage of 60V with a continuous drain current of 3A, while the P-channel unit offers -60V and -2A ratings. Both channels feature logic-level gate drive capability at 4V. Key electrical parameters include a maximum on-resistance of 93mΩ for the N-channel at 10V gate drive and 12.8nC total gate charge. The component operates up to a channel temperature of 150°C with a maximum power dissipation of 1.5W.

Feature Summary

• Integrates complementary N-channel and P-channel MOSFETs within a single compact surface-mount footprint.
• Features ultrahigh-speed switching characteristics combined with low on-state resistance for efficient power handling.
• Supports direct logic-level drive signals at 4V gate-source voltage thresholds.

Applications

• General-purpose switching circuits for home appliances and office equipment.
• Audio-visual (AV) equipment signal routing and power management.
• Communication device interface drivers and level shifting.

Procurement Notes

Verify the specific manufacturer origin upon procurement, as the part was originally manufactured by Sanyo Semiconductor Co., Ltd. before its acquisition by onsemi. Confirm that the delivered units match the ECH8619-TL-E designation and packaging format. Ensure compliance with RoHS standards if required by the end application. Check for any updated datasheet revisions or environmental declarations provided by the current supplier.

Selection Notes

Select this component for applications requiring a matched pair of N-type and P-type switches in a minimal board area. The 4V logic drive compatibility simplifies control circuitry design compared to standard threshold devices. Consider the 1.5W total dissipation limit and thermal mounting requirements when designing heat dissipation paths. Verify that the 60V breakdown voltage meets the system's peak transient voltage requirements.

Part Context

The ECH8619 series consists of silicon MOSFETs designed for general-purpose switching. Originally produced by Sanyo Semiconductor, the product line is now managed under the onsemi brand following corporate acquisitions. The device belongs to the category of discrete FET arrays intended for low-voltage, high-density electronic assemblies.

Replacement Considerations

Check for direct cross-reference part numbers from onsemi or other distributors. Verify pinout compatibility and electrical parameter equivalence if substituting with similar dual MOSFET arrays. Ensure the replacement package matches the 8-ECH dimensions for mechanical fit.