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The ECH8652-TL-H is a dual P-channel power MOSFET from onsemi, housed in an ECH8 surface-mount package. It features a drain-to-source voltage of -12 V and a continuous drain current of -6 A. The device exhibits low on-state resistance, typically 28 mΩ at VGS = -4.5 V and ID = -3 A. Designed for low-voltage drive applications, it supports operation with gate-source voltages as low as -1.8 V. Key electrical characteristics include a total gate charge of 11 nC and a forward transfer admittance of 11 S. The component is halogen-free compliant and includes an integrated protection diode.
Verify the specific ordering suffix TL-H to confirm the reel quantity of 3,000 pieces per unit. Ensure that the procurement documentation explicitly states Pb-Free and Halogen-Free compliance status. Cross-reference the manufacturer part number against official onsemi databases to validate authenticity before finalizing acquisition.
Select this component when a compact dual P-channel solution is required for low-voltage logic interfacing. The ECH8 package offers a small footprint suitable for space-constrained designs. Verify that the application voltage does not exceed the -12 V rating and that the thermal dissipation requirements align with the 1.3 W allowable power dissipation limit on standard substrates.
This device belongs to the ECH8652 series of dual power MOSFETs manufactured by onsemi. It utilizes trench technology to achieve low on-resistance within a minimal outline. The ECH8 package provides a standardized form factor for automated surface-mount assembly processes.
Direct substitutes must match the -12 V / -6 A / Dual P-Channel specifications and ECH8 package dimensions. Verify pinout compatibility (Source-Gate-Source-Gate-Drain-Drain-Drain-Drain) to ensure interchangeability without PCB redesign.