ECH8652-TL-H

ECH8652-TL-H

$0.25
  • Description:MOSFET 2P-CH 12V 6A 8ECH
  • Series:-

SKU:a7a8eb995af9 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 12V 6A 8ECH
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):12V
  • Current - Continuous Drain (Id) @ 25°C:6A
  • Rds On (Max) @ Id, Vgs:28mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:1000pF @ 6V
  • Power - Max:1.5W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SMD, Flat Leads
  • Supplier Device Package:8-ECH
  • Grade:-
  • Qualification:-

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ECH8652-TL-H

Overview

The ECH8652-TL-H is a dual P-channel power MOSFET from onsemi, housed in an ECH8 surface-mount package. It features a drain-to-source voltage of -12 V and a continuous drain current of -6 A. The device exhibits low on-state resistance, typically 28 mΩ at VGS = -4.5 V and ID = -3 A. Designed for low-voltage drive applications, it supports operation with gate-source voltages as low as -1.8 V. Key electrical characteristics include a total gate charge of 11 nC and a forward transfer admittance of 11 S. The component is halogen-free compliant and includes an integrated protection diode.

Feature Summary

  • Dual P-channel configuration facilitates high-density mounting
  • Low ON-resistance optimized for efficiency
  • Capable of 1.8V drive levels
  • Integrated protection diode

Applications

  • Load switching circuits
  • Power management modules
  • Motor driver interfaces

Procurement Notes

Verify the specific ordering suffix TL-H to confirm the reel quantity of 3,000 pieces per unit. Ensure that the procurement documentation explicitly states Pb-Free and Halogen-Free compliance status. Cross-reference the manufacturer part number against official onsemi databases to validate authenticity before finalizing acquisition.

Selection Notes

Select this component when a compact dual P-channel solution is required for low-voltage logic interfacing. The ECH8 package offers a small footprint suitable for space-constrained designs. Verify that the application voltage does not exceed the -12 V rating and that the thermal dissipation requirements align with the 1.3 W allowable power dissipation limit on standard substrates.

Part Context

This device belongs to the ECH8652 series of dual power MOSFETs manufactured by onsemi. It utilizes trench technology to achieve low on-resistance within a minimal outline. The ECH8 package provides a standardized form factor for automated surface-mount assembly processes.

Replacement Considerations

Direct substitutes must match the -12 V / -6 A / Dual P-Channel specifications and ECH8 package dimensions. Verify pinout compatibility (Source-Gate-Source-Gate-Drain-Drain-Drain-Drain) to ensure interchangeability without PCB redesign.

ECH8652-TL-HECH8652-TL-H
$0.25
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