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The ECH8653-S-TL-H is a dual N-channel enhancement-mode MOSFET array manufactured by onsemi. It features a maximum drain-source voltage of 20 V and a continuous drain current of 7.5 A. The device utilizes an 8-ECH surface-mount package with dimensions of 2.9 mm in length, 2.3 mm in width, and 0.9 mm in height. Key electrical parameters include a maximum on-resistance of 20 mΩ at 4 A and 8 V, a typical gate charge of 18.5 nC at 8 V, and a maximum power dissipation of 1.5 W. The component supports a junction temperature up to +150 °C and operates with a logic-level gate threshold.
Verify the specific suffix 'S' against official datasheets, as availability may vary. Confirm RoHS compliance status through manufacturer documentation. Ensure the 8-ECH footprint matches PCB design requirements. Check for obsolescence notices or lifecycle changes prior to finalizing procurement plans.
Select this component for applications requiring dual N-channel switching with low on-resistance. Consider the 20 V rating and 7.5 A current capacity for suitable load conditions. Evaluate the 8-ECH package size for space-constrained designs. Verify gate charge specifications against driver capabilities for optimal switching performance.
This part belongs to the ECH series of power MOSFET arrays from onsemi. These devices are designed for high-density surface-mount applications. The series offers integrated dual channels to reduce board space compared to discrete solutions. They are commonly used in portable electronics and industrial control systems.
ECH8653-TL-H is listed as a similar alternative. Verify pinout compatibility and electrical parameter equivalence before substitution. Ensure the replacement maintains the required 8-ECH package form factor.