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The onsemi ECH8654-TL-HX is a dual P-channel enhancement mode MOSFET array housed in an 8-pin ECH surface-mount package. It features a maximum drain-source voltage of 20 V and a continuous drain current of 5 A per channel. The device exhibits a maximum on-resistance of 98 mΩ at 4.5 V gate drive, with a typical gate charge of 11 nC at 4.5 V. Designed for high thermal performance, it supports a maximum power dissipation of 1.3 W and operates up to a junction temperature of +150 °C.
Verify the specific suffix 'TL-HX' against official datasheets to confirm tape-and-reel packaging specifications and moisture sensitivity level. Ensure compatibility with RoHS directives and check for any regional compliance requirements before finalizing procurement orders.
Select this component when a dual P-channel solution is required in a minimal space-constrained design. Consider the 98 mΩ on-resistance for efficiency calculations and verify that the 20 V voltage rating exceeds the maximum circuit operating voltage with adequate margin.
This part belongs to the ECH865x series of dual MOSFET arrays from onsemi. It complements N-channel variants like the ECH8655R, offering complementary polarity options for bridge or push-pull configurations while maintaining consistent physical dimensions and thermal characteristics across the family.
Direct substitutes include the ECH8654-TL-H (standard reel) if packaging differs. Verify pinout compatibility with other dual P-channel MOSFETs in the 8-ECH package before substitution.