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Product Detailed Parameters
- Description：MOSFET 2N-CH 24V 9A ECH8
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：8-ECH
- Grade：-
- Qualification：-
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Overview
The onsemi ECH8655R-R-TL-H is a dual N-channel enhancement mode MOSFET array designed for surface-mount applications. It features a Vds rating of 24 V and supports a continuous drain current (Id) of 9 A at 25°C. The device exhibits a maximum Rds(on) of 17 mΩ at Vgs = 4.5 V and Id = 4.5 A, with a typical gate charge (Qg) of 16.8 nC at 10 V. Packaged in an 8-ECH footprint measuring 2.9 mm x 2.3 mm x 0.9 mm, it offers a power dissipation capability of 1.4 W to 1.5 W and operates within a junction temperature range up to +150°C.
Feature Summary
- Dual N-Channel Configuration: Integrates two independent N-channel MOSFETs within a single compact package to reduce board space and simplify circuit design.
- Logic Level Gate Drive: Optimized threshold voltage characteristics allow for efficient switching control using standard logic-level signals.
- Low On-Resistance: Achieves low Rds(on) values to minimize conduction losses and improve overall power efficiency in switching applications.
Applications
- DC-DC converter output stages
- Load switching circuits
- Power management modules
Procurement Notes
Verify the specific suffix 'R' against the manufacturer's official datasheet to confirm tape-and-reel packaging specifications and any minor parameter variations compared to non-R variants. Ensure compatibility with RoHS3 and REACH regulations as stated in the component documentation before finalizing procurement orders.
Selection Notes
Select this component when a dual N-channel configuration is required in a small 8-ECH package. Verify that the 24 V breakdown voltage and 9 A current rating meet the circuit requirements. Check thermal management needs given the 1.4 W power dissipation limit in the specified package.
Part Context
This part belongs to the ECH8655R series from onsemi, which focuses on low-voltage, high-current dual MOSFET solutions. The series utilizes silicon technology and is designed for surface-mount assembly, targeting applications where space constraints and switching efficiency are critical design factors.
Replacement Considerations
The Renesas RJK03M5DNS-00#J5 is listed as a similar alternative by distributors. Verify pinout compatibility and electrical parameters against the official datasheet before substitution.
