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The ECH8661-TL-HX is a P-channel enhancement mode MOSFET manufactured by onsemi. It features an ECH surface-mount package with eight pins and two isolated channels. The device supports a maximum drain-source voltage of 30 V and a continuous drain current of 5.5 A. Key electrical parameters include a maximum drain-source resistance of 82 mΩ, a gate threshold voltage up to 2.6 V, and a typical gate charge of 13 nC at 10 V. The component operates within a temperature range up to +150 °C and has a maximum power dissipation of 1.5 W.
Verify the specific suffix 'HX' against official datasheets to confirm tape-and-reel packaging specifications. Ensure compatibility with standard SMD reflow profiles. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.
Select this component when dual isolated P-channel switching is required in compact designs. The 30 V rating suits low-voltage systems. Verify thermal requirements against the 1.5 W dissipation limit. Confirm that the 8-pin ECH footprint fits the PCB layout constraints.
This part belongs to onsemi's discrete MOSFET portfolio designed for surface-mount assembly. The ECH package provides a compact form factor suitable for high-density electronics. It serves as a solution for managing multiple power rails in space-constrained environments.
Check for direct substitutes from onsemi or other manufacturers offering identical 30 V, 5.5 A P-channel specs in an 8-pin ECH package. Verify pinout compatibility and thermal characteristics before substitution.