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Product Detailed Parameters
- Description：ECH8664R - N-CHANNEL POWER MOSFE
- Series：*
- Mfr：onsemi
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The ECH8664R-TL-H is an N-channel enhancement mode MOSFET manufactured by onsemi, designed for low-voltage switching applications. It features a drain-source breakdown voltage (Vds) of 30 V and supports a continuous drain current (Id) of 5 A. The device exhibits a maximum on-resistance (Rds(on)) of 29 mΩ at a gate-source voltage (Vgs) of 10 V. Packaged in the compact ECH-8 surface-mount format with dimensions of 2.9 mm x 2.3 mm x 0.9 mm, it offers a power dissipation rating of 1.5 W and operates up to a junction temperature of +150 °C.
Feature Summary
- Dual-die configuration within a single 8-pin package for efficient space utilization
- Low on-resistance optimized for high-efficiency power conversion
- Enhanced thermal performance via exposed pad design
Applications
- DC-DC converter output stages
- Load switching circuits
- Power management ICs
Procurement Notes
Verify the specific suffix TL-H against the manufacturer's latest datasheet to confirm tape-and-reel packaging and lead-free compliance. Ensure the ordering quantity aligns with standard reel sizes. Cross-reference the RoHS status directly with official documentation prior to procurement to meet regulatory requirements.
Selection Notes
Select this component when a 30 V N-channel MOSFET with approximately 5 A current capability is required. The 29 mΩ Rds(on) makes it suitable for low-loss applications. Verify that the ECH-8 footprint matches the PCB layout constraints and that the thermal resistance characteristics fit the system's heat dissipation strategy.
Part Context
This part belongs to the ECH86xxR series of dual MOSFETs from onsemi. These devices integrate two independent chips in one package to save board space. The ECH8664R variant specifically provides N-channel functionality, distinguishing it from complementary or P-channel counterparts in the same family.
Replacement Considerations
Direct substitutes include other 30 V, 5 A N-channel MOSFETs in the ECH-8 package. Check equivalent parts like the ECH8665R or similar onsemi devices with matching pinouts and electrical parameters. Ensure any replacement maintains the same Rds(on) and thermal specifications.
