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The onsemi ECH8667-TL-HX is a P-channel enhancement mode MOSFET array housed in an 8-pin ECH surface-mount package. It features two isolated channels with a maximum drain-source voltage of 30 V and a continuous drain current of 5.5 A. The device exhibits a maximum on-resistance of 82 mΩ, a typical gate charge of 13 nC at 10 V, and a maximum power dissipation of 1.5 W. Constructed from silicon, it supports a maximum operating temperature of +150 °C and includes a maximum gate-source voltage rating of ±20 V.
Verify the specific suffix 'HX' against official manufacturer documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with standard reflow soldering profiles defined in the datasheet. Confirm RoHS compliance status through the latest material declaration provided by onsemi prior to integration into production assemblies.
Select this component when a dual P-channel solution with 30 V rating and 5.5 A current capacity is required in an 8-ECH package. Compare on-resistance and gate charge parameters against alternative arrays to ensure optimal efficiency for the specific load conditions and switching frequencies involved in the design.
This part belongs to the ECH866x series of dual MOSFET arrays manufactured by onsemi. These components are designed for space-constrained applications requiring multiple switching elements in a single package. The ECH package provides a small outline suitable for high-density PCB layouts while maintaining adequate thermal performance for moderate power levels.
Publicly confirmed substitute part numbers for this specific model were not identified in available documentation. Verify pinout and electrical characteristics carefully if considering cross-brand alternatives or other members of the ECH866x family.