ECH8668-TL-H

$0.80

Description：MOSFET N/P-CH 20V 7.5A/5A 8ECH
Series：-

SKU:d767b32f5d01 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 7.5A/5A 8ECH
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：7.5A, 5A
Rds On (Max) @ Id, Vgs：17mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：10.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：1060pF @ 10V
Power - Max：1.5W
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SMD, Flat Leads
Supplier Device Package：8-ECH
Grade：-
Qualification：-

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ECH8668-TL-H

Overview

The onsemi ECH8668-TL-H is a complementary N/P-channel enhancement-mode MOSFET array housed in an 8-ECH surface-mount package. It integrates one N-channel and one P-channel transistor within a single compact footprint, measuring 2.9mm by 2.3mm with a height of 0.9mm. The device supports a maximum drain-source voltage of 20V for both channels. Continuous drain current ratings are specified at 7.5A for the N-channel and 5A for the P-channel at 25°C. The typical on-resistance is 17mΩ at Vgs=4.5V and Id=4A. Maximum gate-source voltage limits are ±20V, while the maximum power dissipation is rated at 1.5W. The component operates up to a junction temperature of +150°C.

Feature Summary

Integrates complementary N-channel and P-channel MOSFETs in a single surface-mount package
Optimized for logic-level gate drive applications with low threshold requirements
Compact 8-ECH footprint designed for space-constrained PCB layouts

Applications

DC-DC converter synchronous rectification stages
Motor driver output stages requiring complementary switching
Load switch circuits for power management systems

Procurement Notes

Verify component status prior to design finalization as this part number may be discontinued or subject to end-of-life notices. Confirm availability through authorized distributors and check for valid replacement alternatives if production continuity is required. Ensure all ordering suffixes match specific packaging and tape-and-reel specifications defined in the official datasheet.

Selection Notes

Select this component when a matched N/P pair is needed for high-side and low-side driving within limited board area. Evaluate thermal performance against the 1.5W dissipation limit under expected load conditions. Compare on-resistance values at the target gate drive voltage to ensure sufficient efficiency for the application's current requirements.

Part Context

This device belongs to the ECH series of small-signal MOSFET arrays from onsemi. The 8-ECH package provides a standardized outline for dual-transistor configurations, facilitating automated assembly. It serves as a building block for power stages where complementary switching action is fundamental to circuit operation.