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The onsemi ECH8672-TL-H is a P-channel enhancement mode MOSFET designed for surface-mount applications. It features an ECH package with eight pins and utilizes silicon technology. The device supports a maximum drain-source voltage of 30 V and a continuous drain current of 5.5 A. Key electrical parameters include a maximum drain-source resistance of 82 mΩ, a maximum gate threshold voltage of 2.6 V, and a typical gate charge of 13 nC at 10 V. It operates within a temperature range up to +150 °C.
Verify the specific datasheet revision and compliance documentation directly from onsemi or authorized distributors before integration. Confirm that the ECH package dimensions and pinout match the target PCB footprint requirements. Ensure that the thermal management design accommodates the specified power dissipation limits under expected operating conditions.
Select this component when a dual isolated P-channel solution is required in a small form factor. Compare the 82 mΩ on-resistance against system efficiency targets. Verify that the 30 V breakdown voltage provides sufficient margin for the application's supply rails. Consider the 13 nC gate charge for driving capability requirements.
This part belongs to onsemi's ECH series of surface-mount MOSFETs. The series offers various configurations including single and dual channels with different voltage and current ratings. The ECH8672-TL-H specifically addresses needs for compact dual-channel isolation in low-voltage environments.
Direct substitutes may include other ECH-series parts with similar electrical characteristics. Verify pin compatibility and thermal performance before substitution. Consult official cross-reference lists for confirmed alternatives.