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The EFC4619R-A-TR is an N-channel power MOSFET from onsemi, housed in the Dual EFCP package. It features a 24V drain-source voltage rating and a continuous drain current of 6A. The device exhibits a maximum on-resistance of 23mΩ at room temperature. Designed for low-voltage applications, it supports a gate drive voltage as low as 2.5V. The component integrates a protection diode and utilizes a common-drain topology.
Verify the specific suffix 'A' against the manufacturer's official documentation to confirm if it denotes a specific tape-and-reel variant or quality grade distinct from the standard EFC4619R-TR. Ensure the source document explicitly defines the functional difference associated with this suffix before procurement.
Select this component for low-voltage power switching applications requiring high efficiency and compact footprint. The 2.5V drive capability makes it suitable for logic-level control interfaces. Verify that the 24V rating aligns with the system's maximum operating voltage and that the 6A current capacity meets the load requirements under thermal constraints.
This part belongs to onsemi's EFCP series of dual MOSFET arrays. These devices are engineered for portable electronics and battery-powered systems where space and power efficiency are critical. The EFCP package provides a small outline solution compared to traditional discrete packages.
Check for direct substitutes within the same EFCP family or equivalent 24V/6A N-channel MOSFETs in compatible packages. Verify pinout compatibility and electrical parameter equivalence, specifically Rds(on) and Vgs thresholds, before substitution.