EFC4K110NUZTDG

EFC4K110NUZTDG

$0.76
  • Description:MOSFET 2N-CH 24V 25A 10WLCSP
  • Series:-

SKU:1cb2b02ccb0e Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 24V 25A 10WLCSP
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Common Drain
  • FET Feature:-
  • Drain to Source Voltage (Vdss):24V
  • Current - Continuous Drain (Id) @ 25°C:25A
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:49nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:2.5W
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:10-SMD, No Lead
  • Supplier Device Package:10-WLCSP (3.2x2.1)
  • Grade:-
  • Qualification:-

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EFC4K110NUZTDG

Overview

The onsemi EFC4K110NUZTDG is a dual N-channel silicon MOSFET designed for high-speed switching applications. It features low on-resistance and enhanced power efficiency, making it suitable for demanding power management tasks. The device operates with a drain-source voltage of 24V and supports a continuous current of 25A. Packaged in a compact WLCSP-10 (2.1x3.2 mm) format, it integrates two independent channels within a single small outline package to save board space.

Feature Summary

  • Dual N-channel configuration for efficient power handling
  • Low on-resistance for minimized power loss
  • High-speed switching capability for improved performance
  • Compact WLCSP packaging for space-constrained designs

Applications

  • Power management modules
  • Battery protection circuits
  • Portable electronic devices
  • Consumer electronics power stages

Procurement Notes

Verify the specific suffix TDG against official onsemi documentation to confirm tape-and-reel packaging and lead-free status. Ensure the ordering part number matches the exact electrical specifications required for your design. Cross-reference the datasheet revision date to confirm the most recent technical parameters are being utilized for validation.

Selection Notes

Select this component when a dual N-channel solution is required in a minimal footprint. The 24V rating and 25A current capacity define its operational limits. Consider the thermal performance inherent to the WLCSP-10 package during layout. Compare against single-channel alternatives if only one path is needed, or higher voltage parts if system requirements exceed 24V.

Part Context

This part belongs to onsemi's discrete semiconductor portfolio, specifically within the MOSFET category. It represents a move toward highly integrated power solutions using advanced packaging technologies like WLCSP. The dual-channel design allows for synchronized control or parallel operation, distinguishing it from standard single-transistor packages.

Replacement Considerations

Direct substitutes must match the 24V/25A dual N-channel specification and WLCSP-10 package. Verify pinout compatibility before swapping. Generic replacements may differ in on-resistance or switching speed. Consult onsemi for approved alternate part numbers within the same series.

EFC4K110NUZTDGEFC4K110NUZTDG
$0.76
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