EFC6604R-TR

FET, MOSFET Arrays Overview

The EFC6604R-TR is a dual N-channel Power MOSFET manufactured by onsemi, housed in a WLCSP-6 package. It features a drain-source breakdown voltage of 24 V and supports a continuous drain current of 13 A. The device exhibits a maximum on-resistance of 11.5 mΩ at a gate-source voltage of 12 V. It operates with a logic-level gate drive capability down to 2.5 V. The total gate charge is specified as 48 nC. The component is rated for operation between -55°C and +150°C junction temperature, with a power dissipation capacity of 2 W.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration within a compact WLCSP-6 footprint
• Logic-level gate drive compatibility supporting 2.5 V activation
• Low on-state resistance for efficient power switching
• High thermal stability suitable for portable machine applications

FET, MOSFET Arrays Applications

• Power switches for portable machines
• DC-DC converter circuits
• Battery protection systems

FET, MOSFET Arrays Procurement Notes

Verify the current production status before procurement, as multiple distributor sources indicate this specific part number may be obsolete or scheduled for discontinuation. Confirm availability through official onsemi channels or authorized partners to ensure supply chain reliability. Check for valid replacement components if the original part is no longer in active manufacturing.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring low profile packaging and dual channel integration. The 2.5 V logic level drive makes it suitable for microcontroller-controlled systems. Ensure the design accommodates the 24 V voltage rating and 13 A current limit. Consider the thermal performance requirements given the small WLCSP-6 package size and 2 W power dissipation rating.

FET, MOSFET Arrays Part Context

This device belongs to onsemi's portfolio of surface-mount power MOSFETs designed for space-constrained electronics. The EFC series utilizes silicon technology optimized for low on-resistance and fast switching speeds. The WLCSP-6 package provides a minimal board area solution compared to traditional leaded packages, facilitating high-density PCB layouts in consumer and industrial devices.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Distributor listings reference other dual N-channel MOSFETs such as DMN1019UFDE-7, but pinout and parameter compatibility must be verified independently against the official datasheet before substitution.