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Product Detailed Parameters
- Description：MOSFET 2N-CH 6EFCP
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：19.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.6W
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-SMD, No Lead
- Supplier Device Package：6-EFCP (1.9x1.46)
- Grade：-
- Qualification：-
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Overview
The EFC6605R-TR is a dual N-channel power MOSFET from onsemi, housed in the compact 6EFCP package. It features a drain-source voltage rating of 20V and a continuous drain current capacity of 10A. The device exhibits a low on-resistance (RDS(on)) of 13.3mΩ, optimized for efficient power switching applications. This component is part of the EFCP series designed for high-density power management solutions.
Feature Summary
- Dual N-Channel configuration for space-efficient circuit design
- Low on-resistance for improved power efficiency
- Compact 6EFCP surface-mount package
Applications
- Power management integrated circuits (PMICs)
- DC-DC converter modules
- Industrial automation control systems
Procurement Notes
Verify that the specific revision suffix matches your supply chain requirements, as variants such as EFC6605R-V-TR exist. Confirm availability status carefully, as official documentation indicates this device may be discontinued or not recommended for new designs. Contact the manufacturer directly for current lifecycle status and alternative sourcing options before finalizing procurement plans.
Selection Notes
Select this component for applications requiring a dual N-channel MOSFET with 20V capability and 10A current handling in a small footprint. Ensure the 13.3mΩ RDS(on) meets thermal and efficiency targets. Note that the device is marked as discontinued; evaluate long-term supply stability and consider redesigning with active alternatives if new production volume is required.
Part Context
This component belongs to onsemi’s EFCP family of dual MOSFET arrays. These devices are engineered for high-efficiency power switching in portable and industrial electronics. The EFC6605R-TR specifically targets low-voltage, high-current applications where board space is constrained and power loss minimization is critical for system performance.
Replacement Considerations
Official documentation states this device is discontinued and not recommended for new designs. No public substitute part numbers are confirmed in the provided source material. Consult onsemi sales support for qualified replacement recommendations.
