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The EFC6611R-A-TF is a dual N-channel depletion-mode MOSFET array in a CSP-6 package. It features a maximum drain-source voltage of 12 V and a continuous drain current of 27 A. The device has a typical on-resistance of 6.3 mΩ and a gate charge of 100 nC at 4.5 V. Operating temperatures range from -55 °C to +150 °C with a power dissipation of 2.5 W.
Verify the component datasheet for exact electrical characteristics and thermal limits before integration. Confirm that the depletion-mode functionality aligns with the system's default state requirements. Ensure the CSP-6 package dimensions fit the PCB footprint constraints. Check for any specific handling instructions related to the small outline package.
Select this part when a dual N-channel switch with normally-on behavior is required. The 12 V rating suits low-voltage digital logic systems. Consider the 27 A current capacity for moderate load switching. The depletion mode eliminates the need for negative bias voltages for turn-off, simplifying driver design compared to enhancement modes.
This component belongs to onsemi's discrete MOSFET portfolio, specifically designed for compact power switching applications. It utilizes silicon technology and is housed in a leadless chip-scale package. The device complements other low-voltage power solutions by offering integrated dual-channel functionality in a minimal footprint.
Direct substitutes include the EFC8811R-TF, which shares similar depletion-mode characteristics and package type. Verify pinout compatibility and electrical parameters such as Rds(on) and Vgs thresholds when cross-referencing alternative part numbers.