EFC6612R-A-TF

$0.43

Description：MOSFET 2N-CH 6CSP
Series：-

SKU:55b85f51c0a5 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 6CSP
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Bulk
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual) Asymmetrical
FET Feature：Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：27nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：2.5W
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：6-SMD, No Lead
Supplier Device Package：6-CSP (1.77x3.54)
Grade：-
Qualification：-

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EFC6612R-A-TF

Overview

The onsemi EFC6612R-A-TF is a dual N-channel MOSFET array housed in a compact 6-CSP (1.77x3.54 mm) surface-mount package. It features a drain-source breakdown voltage of 20 V and supports a continuous drain current of 23 A. The device exhibits a maximum on-resistance of 4.2 mΩ at specified conditions, ensuring low conduction losses in power management circuits. With a power dissipation rating of 2.5 W, this component is engineered for high-efficiency switching applications requiring robust performance within small form factors.

Feature Summary

Dual N-channel configuration integrated into a single compact surface-mount package
High current handling capability with 23 A continuous drain current rating
Low on-resistance design to minimize power loss during switching operations
Robust 20 V breakdown voltage suitable for demanding power management tasks

Applications

High-efficiency power switching applications
Demanding power management tasks
Buck regulator output stages

Procurement Notes

Verify the specific suffix 'A' against official onsemi documentation to confirm exact electrical tolerances and marking codes. Ensure the 6-CSP package dimensions match the target PCB footprint. Confirm that the 20 V rating aligns with system voltage requirements. Cross-reference the 23 A current rating with thermal constraints in the final assembly. Validate that the 4.2 mΩ resistance meets efficiency targets under operating load conditions.

Selection Notes

Select this component when space-constrained designs require dual N-channel MOSFETs with high current capacity. The 20 V rating suits low-voltage DC-DC conversion systems. Consider the 2.5 W power dissipation limit for thermal management strategies. The compact CSP package facilitates automated assembly in dense layouts. Ensure gate drive voltages are compatible with the threshold characteristics documented in the datasheet.

Part Context

This part belongs to onsemi's EFCP series of power MOSFET arrays. It complements other components in the EFC66xx family, offering similar functionality with specific voltage and current ratings tailored for modern portable electronics and industrial power supplies. The series emphasizes miniaturization without compromising electrical performance.