EKI06108

Description：MOSFET N-CH 60V 57A TO220-3
Series：-
Mfr：Sanken Electric USA Inc.
Package：Tube

SKU:277881a02f35 Category: Single FETs, MOSFETs Brand: Sanken Electric USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 57A TO220-3
Series：-
Mfr：Sanken Electric USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：57A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9.2mOhm @ 28.5A, 10V
Vgs(th) (Max) @ Id：2.5V @ 650µA
Gate Charge (Qg) (Max) @ Vgs：38.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2520 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：90W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220-3
Package / Case：TO-220-3

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EKI06108

Overview

The EKI06108 is a 60 V N-channel Trench Power MOSFET manufactured by Sanken Electric. It features a maximum continuous drain current of 57 A at 25 °C case temperature and a low on-resistance (RDS(ON)) of 9.2 mΩ max at VGS = 10 V, ID = 28.5 A. The device supports 4.5 V gate drive with a total gate charge (Qg) of 16.9 nC at VGS = 4.5 V. It operates within a junction temperature range of -55 °C to 150 °C and utilizes a TO-220-3L package.

Feature Summary

Capable of operation with a 4.5 V gate drive voltage for flexible control interface compatibility
Features low total gate charge and high-speed switching characteristics for efficient power conversion
Provides low static drain-to-source on-resistance to minimize conduction losses
Undergoes 100% Unclamped Inductive Load (UIL) testing to ensure reliability

Applications

DC-DC converters
Synchronous rectification circuits
General power supplies

Procurement Notes

Verify the component revision level against the latest datasheet documentation prior to implementation. Confirm that the procurement channel provides original manufacturer packaging to ensure authenticity. Check for specific environmental compliance certifications required by your regional regulations before finalizing orders.

Selection Notes

Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Ensure the driving circuit can supply sufficient gate current to achieve the rated switching speeds. Verify that the system's peak current demands remain within the pulsed drain current limits defined in the absolute maximum ratings table.

Part Context

This component belongs to Sanken Electric's lineup of low RDS(ON) N-channel trench MOSFETs designed for general-purpose power switching applications. It is intended for use in electronic equipment such as home appliances and office machinery. The product is RoHS compliant and manufactured using lead-free processes.