ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
EM6K1T2R is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET 2N-CH 30V 0.1A EMT6. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for EM6K1T2R
- Description：MOSFET 2N-CH 30V 0.1A EMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：100mA
- Rds On (Max) @ Id, Vgs：8Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id：1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：13pF @ 5V
- Power - Max：150mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：EMT6
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for EM6K1T2R
FET, MOSFET Arrays Overview
The EM6K1T2R is a dual N-channel MOSFET from ROHM Semiconductor, housed in an SOT-563 (EMT6) surface-mount package. It features a drain-source breakdown voltage of 30V and a continuous drain current of 100mA. The device has a maximum on-resistance of 10 Ohms and operates with a gate-source voltage range of ±8V. It supports an operating temperature range from -55°C to +150°C with a power dissipation of 150mW.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration for compact circuit integration
- High thermal stability with extended operating temperature range
- Surface-mount design optimized for automated assembly
FET, MOSFET Arrays Applications
- Low-power signal switching applications
- Battery protection circuits
- Small-signal amplification stages
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix 'T2R' against the manufacturer's official datasheet to confirm tape and reel specifications. Ensure compatibility with standard SMT reflow profiles for the EMT6 package. Cross-reference the 30V rating with system requirements to prevent overvoltage conditions during operation.
FET, MOSFET Arrays Selection Notes
Select this component when a dual N-channel solution is required within a minimal footprint. The 30V rating suits low-voltage logic interfaces. Consider the 10 Ohm on-resistance for efficiency constraints. Verify that the 100mA current limit meets load demands without exceeding thermal limits.
FET, MOSFET Arrays Part Context
This part belongs to ROHM's small-signal MOSFET lineup, designed for space-constrained portable electronics. It complements other devices in the series by offering dual-channel functionality in a single SOT-563 package, reducing board area compared to discrete single transistors.
FET, MOSFET Arrays Replacement Considerations
The EM6K1T2R may be substituted with the EM6K1T2G for lead-free compliance if verified by the manufacturer. Check pinout compatibility before replacing with generic dual N-channel MOSFETs.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
