EM6K31GT2R

Overview

The EM6K31GT2R is a dual N-channel small signal MOSFET manufactured by ROHM Semiconductor. It features a 60V drain-source breakdown voltage and a continuous drain current of ±250mA. The device operates with a low voltage drive of 2.5V, achieving a maximum on-state resistance of 2.4Ω at VGS=10V and 3.0Ω at VGS=4.5V. Packaged in an EMT6 (SOT-563) surface-mount configuration, it dissipates up to 150mW of power. The component supports junction temperatures from -55°C to +150°C and includes internal body diodes.

Feature Summary

• Low voltage drive capability optimized for 2.5V operation
• High-speed switching performance suitable for compact designs
• Small footprint EMT6 surface-mount package

Applications

• General purpose switching in consumer electronics
• Signal path control in audio and office automation equipment
• Battery management circuits in portable devices

Procurement Notes

Verify the specific ordering suffix GT2R against official documentation to confirm packaging details such as tape width and reel size. Ensure that the procurement channel provides valid RoHS compliance data and confirms the marking code K31 matches the physical component received.

Selection Notes

Select this component when a dual N-channel configuration is required within a minimal SOT-563 footprint. It is appropriate for applications demanding low gate drive voltages around 2.5V while maintaining a 60V blocking capability. Consider thermal derating curves if operating near the maximum power dissipation limit.

Part Context

This part belongs to the EM6K31 series of Nch+Nch MOSFETs designed using micro-processing technology for low on-resistance. It is categorized under standard-grade discrete transistors intended for ordinary electronic equipment rather than automotive or medical specific applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided datasheet.