EM6K33T2R

FET, MOSFET Arrays Overview

The EM6K33T2R is a dual N-channel MOSFET manufactured by ROHM Semiconductor, designed for low-voltage drive applications. It features a SOT-563-6 surface-mount package with two independent channels. Key electrical parameters include a drain-source breakdown voltage (Vds) of 50 V and a continuous drain current (Id) of 200 mA. The device exhibits a maximum on-resistance (Rds(on)) of 1.6 Ohms at the specified gate-source voltage. It operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 150 mW. The typical threshold voltage (Vgs(th)) is 1 V, and it supports a gate-source voltage range of ±8 V.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration in a compact SOT-563-6 surface-mount package
• Optimized for low-voltage drive operations with a 1 V typical threshold
• Enhanced mode operation suitable for signal switching and load control

FET, MOSFET Arrays Applications

• Low-voltage signal switching circuits
• Load management in portable electronic devices
• General-purpose transistor arrays for board-level logic interfacing

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official datasheets. Ensure storage conditions maintain integrity within specified temperature limits. Validate package marking against manufacturer specifications to prevent counterfeit introduction into assembly lines.

FET, MOSFET Arrays Selection Notes

Select this component when dual N-channel isolation is required in minimal footprint designs. Consider the 1.6 Ohm on-resistance for low-current applications where voltage drop is critical. Verify that the 50 V breakdown voltage exceeds circuit peak voltages. Ensure gate drive signals remain within the ±8 V limit to prevent oxide damage.

FET, MOSFET Arrays Part Context

This part belongs to the EM6K33 series of dual MOSFETs from ROHM Semiconductor. It shares the SOT-563-6 package form factor with other variants in the family but differs in specific electrical ratings such as on-resistance and breakdown voltage. The series targets cost-sensitive consumer electronics requiring reliable small-signal switching capabilities.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must match the SOT-563-6 package and dual N-channel configuration. Verify equivalent Vds, Id, and Rds(on) values to ensure circuit compatibility. Check if alternative parts support the same 1.2 V drive requirement and thermal characteristics.