FET, MOSFET Arrays EM6M2T2R product image

EM6M2T2R

$0.67
  • Description:MOSFET N/P-CH 20V 0.2A EMT6
  • Series:-

SKU:05c77e782a88 Category: Brand:

  
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EM6M2T2R is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is MOSFET N/P-CH 20V 0.2A EMT6. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for EM6M2T2R

  • Description:MOSFET N/P-CH 20V 0.2A EMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:200mA
  • Rds On (Max) @ Id, Vgs:1Ohm @ 200mA, 4V
  • Vgs(th) (Max) @ Id:1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Input Capacitance (Ciss) (Max) @ Vds:25pF @ 10V
  • Power - Max:150mW
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:EMT6
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for EM6M2T2R

EM6M2T2R

FET, MOSFET Arrays Overview

The EM6M2T2R is a dual complementary MOSFET (N-channel and P-channel) manufactured by ROHM Semiconductor. It utilizes micro-machining technology to achieve low on-resistance characteristics suitable for compact applications. The device operates with a drive voltage of 1.2V, featuring an N+P polarity configuration in a surface-mount EMT6 package (SOT-563). Key electrical parameters include a drain-source voltage of 20V and a continuous drain current of 0.2A. Power dissipation is rated at 0.15W, with an operating temperature range from -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Low voltage 1.2V drive capability
  • Complementary small signal MOSFET structure
  • Compact surface mount packaging

FET, MOSFET Arrays Applications

  • General purpose switching circuits
  • Low voltage logic interface applications
  • Portable electronic devices requiring compact components

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix and tape/reel quantity against official manufacturer documentation before procurement. Confirm that the component meets RoHS compliance requirements for your target market. Ensure storage conditions adhere to the specified temperature limits to maintain device integrity during handling and assembly processes.

FET, MOSFET Arrays Selection Notes

Select this component when a dual complementary MOSFET solution is required for low-voltage logic levels. The 1.2V drive voltage makes it suitable for modern low-power systems. Consider the 0.2A current rating and 0.15W power dissipation limits to ensure adequate thermal management within the SOT-563 footprint for the intended application load.

FET, MOSFET Arrays Part Context

This part belongs to ROHM's lineup of complementary MOSFETs designed for space-constrained environments. The EMT6 package provides a compact form factor compared to discrete transistor arrangements. It serves as an integrated solution for push-pull configurations or differential driving stages where board area is limited.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible alternatives within the same family or other manufacturers offering similar 1.2V drive complementary MOSFETs in SOT-563 packages. Verify that substitute parts match the 20V Vds and 0.2A Id specifications to ensure circuit compatibility without redesign.

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