EMH1405-TL-H

EMH1405-TL-H

$0.26
  • Description:MOSFET N-CH 30V 8.5A 8EMH
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk

SKU:a1f421b98750 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET N-CH 30V 8.5A 8EMH
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:8.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:19mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:820 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):1.5W (Ta)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-EMH
  • Package / Case:8-SMD, Flat Leads

Download product information

EMH1405-TL-H

Overview

The EMH1405-TL-H is an N-channel enhancement-mode power MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 20 V and a continuous drain current of 6 A at 25°C. The device utilizes the compact 8-EMH surface-mount package, measuring 2 mm in length, 1.7 mm in width, and 0.75 mm in height. Key electrical characteristics include a maximum on-resistance of 39 mΩ and a typical gate charge of 6.3 nC at 4.5 V. It supports a maximum power dissipation of 1.4 W and operates up to a junction temperature of +150°C.

Feature Summary

  • Dual N-channel configuration within a single compact surface-mount package
  • Logic-level gate drive capability for efficient switching applications
  • Low on-resistance design to minimize conduction losses
  • High thermal stability with a maximum junction temperature rating of +150°C

Applications

  • DC-DC converter synchronous rectification
  • Power management circuits in portable devices
  • General-purpose low-voltage switching applications

Procurement Notes

Verify the specific suffix TL-H against official onsemi documentation to confirm tape-and-reel packaging and lead-free compliance status. Confirm that the component meets RoHS directives if required for your assembly process. Cross-reference the manufacturer part number with authorized distributors to ensure authenticity and traceability. Check for any recent product change notices or lifecycle status updates directly from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when a dual N-channel MOSFET is required in a minimal footprint for low-voltage power paths. The 20 V rating suits 3.3 V and 5 V systems. Ensure the application current does not exceed 6 A without adequate PCB copper area for thermal management. Compare the 39 mΩ Rds(on) against alternative packages to balance size constraints with thermal performance requirements.

Part Context

This device belongs to the EMH series of small-signal and power MOSFETs designed for space-constrained electronics. The 8-EMH package provides a high pin density relative to its physical size, facilitating dense PCB layouts. It represents onsemi's strategy to offer integrated dual-transistor solutions that reduce board space compared to discrete single-transistor implementations.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with direct replacements by matching the 8-EMH package, 20 V Vds, 6 A Id, and 39 mΩ Rds(on) specifications against other manufacturers' datasheets.

EMH1405-TL-HEMH1405-TL-H
$0.26
Buy Now