FET, MOSFET Arrays EMH2308-TL-H product image

EMH2308-TL-H

  • Description:MOSFET 2P-CH 20V 3A 8EMH
  • Series:-

SKU:9074ef53fe8c Category: Brand:

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EMH2308-TL-H is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 20V 3A 8EMH. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for EMH2308-TL-H

  • Description:MOSFET 2P-CH 20V 3A 8EMH
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate, 1.8V Drive
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:3A
  • Rds On (Max) @ Id, Vgs:85mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:320pF @ 10V
  • Power - Max:1W
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SMD, Flat Leads
  • Supplier Device Package:8-EMH
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for EMH2308-TL-H

EMH2308-TL-H

FET, MOSFET Arrays Overview

The EMH2308-TL-H is a P-channel enhancement mode MOSFET manufactured by onsemi. It features an ECH surface-mount package with eight pins and silicon construction. Key electrical parameters include a maximum drain-source voltage of 12 V, a continuous drain current of 10 A, and a maximum drain-source resistance of 33 mΩ. The device supports a gate threshold voltage up to 1.3 V and operates at temperatures up to +150 °C. Power dissipation is rated at 1.6 W, with typical gate charge of 26 nC at 4.5 V.

FET, MOSFET Arrays Feature Summary

  • P-channel enhancement mode operation for low-side switching applications
  • Low on-resistance design for efficient power handling
  • High-temperature capability suitable for demanding environments

FET, MOSFET Arrays Applications

  • General-purpose switching devices
  • Power management circuits requiring compact form factors

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to confirm exact mechanical and electrical specifications. Ensure compatibility with existing PCB footprints and thermal management requirements before integration into production designs.

FET, MOSFET Arrays Selection Notes

Select this component when a single P-channel MOSFET with high current capacity in a small footprint is required. Compare Rds(on) and thermal performance against alternatives if higher voltage ratings or different package styles are needed for the specific application constraints.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's lineup of surface-mount power transistors designed for space-constrained electronics. The ECH package provides a balance between thermal performance and board area efficiency, targeting modern consumer and industrial devices.

FET, MOSFET Arrays Replacement Considerations

Check for direct pin-compatible substitutes within the same manufacturer family that offer similar voltage and current ratings. Verify that any alternative maintains the same enhancement mode characteristics and package dimensions.

EMH2308-TL-HEMH2308-TL-H

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