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EMH2407-S-TL-H is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 20V 6A 8EMH. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for EMH2407-S-TL-H
- Description：MOSFET 2N-CH 20V 6A 8EMH
- Series：-
- Mfr：onsemi
- Package：Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：8-EMH
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for EMH2407-S-TL-H
FET, MOSFET Arrays Overview
The EMH2407-S-TL-H is a dual N-channel depletion-mode MOSFET manufactured by onsemi. It utilizes the EMH-8 surface-mount package, measuring 2mm x 1.7mm x 0.75mm. The device features a drain-source voltage (Vds) rating of 20V and a continuous drain current (Id) of 6A at 25°C. Key electrical parameters include a maximum on-resistance (Rds(on)) of 39mΩ, a gate threshold voltage range of 0.5V to 1.3V, and a typical gate charge of 6.3nC at Vgs=4.5V. The component supports an operating temperature range from -55°C to +150°C with a power dissipation of 1.4W.
FET, MOSFET Arrays Feature Summary
- Dual N-channel depletion mode configuration for independent channel control
- Compact EMH-8 surface mount footprint suitable for space-constrained designs
- High thermal stability with a maximum junction temperature of 150°C
FET, MOSFET Arrays Applications
- Low-voltage DC-DC converter circuits
- Load switching applications requiring normally-on behavior
- Battery protection and management systems
FET, MOSFET Arrays Procurement Notes
Verify the specific suffix against official manufacturer documentation to confirm pinout and electrical tolerances. Confirm availability status as distribution channels may list obsolete or end-of-life inventory. Ensure compliance with RoHS and REACH requirements relevant to the target market before finalizing procurement decisions.
FET, MOSFET Arrays Selection Notes
Select this component when a dual N-channel depletion mode topology is required within a compact SMD form factor. Compare Rds(on) and gate charge specifications against alternative EMH series devices to ensure compatibility with drive circuitry. Validate that the 20V voltage rating provides sufficient margin for the intended application's peak transient conditions.
FET, MOSFET Arrays Part Context
This part belongs to the onsemi EMH series of small-signal MOSFETs designed for high-density PCB layouts. The EMH-8 package offers a standardized 2mm x 1.7mm outline, facilitating automated assembly. The depletion mode variant distinguishes itself from enhancement mode counterparts by conducting current at zero gate-source voltage.
FET, MOSFET Arrays Replacement Considerations
Cross-reference with EMH2407-TL-H for potential functional equivalence. Verify pinout compatibility and parameter tolerances with other dual N-channel depletion MOSFETs in the EMH-8 package before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
