EMH2412-TL-H

Overview

The EMH2412-TL-H is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in an 8-EMH surface-mount package. The device features a drain-source voltage (Vds) rating of 24 V and supports a continuous drain current (Id) of 6 A at 25°C. The maximum on-resistance (Rds(on)) is specified as 27 mΩ at Vgs = 4.5 V and Id = 3 A. Gate charge (Qg) is typically 6.3 nC at Vgs = 4.5 V. The component operates within a temperature range of -55°C to +150°C junction temperature, with a maximum power dissipation of 1.4 W.

Feature Summary

• Dual N-channel configuration for space-efficient circuit designs
• Logic-level gate drive capability for direct interface with standard logic outputs
• Enhancement mode operation with low threshold voltage characteristics

Applications

• Low-side switching applications in portable electronics
• Battery protection circuits requiring compact form factors
• DC-DC converter output stages in consumer devices

Procurement Notes

Verify component authenticity through authorized distribution channels or certified distributors. Confirm RoHS and REACH compliance status via official datasheets or manufacturer documentation before integration. Check for End-of-Life (EOL) notifications or Product Change Notifications (PCN) that may affect long-term availability or manufacturing processes. Ensure storage conditions adhere to moisture sensitivity level requirements to prevent package damage during soldering.

Selection Notes

Select this component when a dual N-channel MOSFET is required in an 8-EMH package for low-voltage, moderate-current applications. Compare Rds(on) specifications against load requirements to ensure thermal performance meets design constraints. Verify gate charge values align with driver capabilities for efficient switching. Consider the 1.4 W power dissipation limit relative to PCB thermal management strategies.

Part Context

This part belongs to onsemi's EMH series of small-signal MOSFETs designed for high-density surface-mount applications. The 8-EMH package provides a compact footprint suitable for space-constrained consumer electronics and portable devices. It represents a specific variant within the broader family of dual N-channel enhancement mode transistors optimized for logic-level control.

Replacement Considerations

Cross-reference with other dual N-channel MOSFETs in the 8-EMH package offering similar Vds and Id ratings. Verify pinout compatibility and electrical parameters such as Rds(on) and Qg to ensure functional equivalence. Consult manufacturer substitution guides for officially recommended alternatives if available.