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Product Detailed Parameters
- Description：GANFET N-CH 100V 6A DIE OUTLINE
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：30mOhm @ 6A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs：2.8 nC @ 5 V
- Vgs (Max)：+6V, -5V
- Input Capacitance (Ciss) (Max) @ Vds：205 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 125°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC2007 is an enhancement-mode gallium nitride field-effect transistor (eGaN FET) manufactured by Efficient Power Conversion. It features a drain-to-source voltage rating of 100 V and a continuous drain current capability of 6 A at 25°C ambient temperature. The device exhibits a maximum on-resistance of 30 mΩ, contributing to low conduction losses. Its lateral structure provides zero reverse recovery charge, enabling high-frequency switching applications with minimal switching energy loss.
Feature Summary
- Enhancement-mode operation utilizing Gallium Nitride technology grown on silicon wafers
- Lateral device architecture providing exceptionally low gate charge and zero reverse recovery charge
- Low on-state resistance enabled by high electron mobility and low temperature coefficient
Applications
- High efficiency Zero Voltage Switching (ZVS) Class-D amplifiers for wireless power transfer
- A4WP / Rezence compatible wireless power source boards
- Half-bridge or full-bridge topologies in differential mode configurations
Procurement Notes
Verify the specific suffix designation when ordering, as it may indicate package variations or tape-and-reel specifications rather than functional changes. Confirm that the component matches the required 100V rating and 6A current capacity for your specific thermal and electrical design constraints before finalizing procurement.
Selection Notes
Select this component for designs requiring high switching frequencies where low gate charge and zero reverse recovery are critical for efficiency. Ensure the application operates within the specified 100V drain-to-source voltage limit and maintains junction temperatures below the maximum rated operating temperature to guarantee reliability.
Part Context
The EPC2007 is part of the eGaN FET family developed by Efficient Power Conversion. These devices leverage standard CMOS infrastructure to process Gallium Nitride on silicon, combining the benefits of GaN material properties with established manufacturing processes for cost-effective high-performance power solutions.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing gate drivers and bootstrap circuits if considering alternative components.
