EPC2012C

$3.15

Description：GANFET N-CH 200V 5A DIE OUTLINE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:fc3d891237f1 Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：GANFET N-CH 200V 5A DIE OUTLINE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：100mOhm @ 3A, 5V
Vgs(th) (Max) @ Id：2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：1.3 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：140 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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EPC2012C

Overview

The EPC2012C is an enhancement mode (eGaN) field effect transistor (FET) designed for high-performance power switching applications. It serves as the primary semiconductor component in the EPC9004C development board, which is configured as a half-bridge with onboard gate drives. The device supports a maximum device voltage of 200 V and delivers a maximum output current of 2 A. Integrated within the evaluation platform alongside Texas Instruments UCC27611 gate drivers, the EPC2012C facilitates simplified evaluation processes by enabling easy connection into existing converter topologies while maintaining optimal switching performance through dedicated layout and critical components.

Feature Summary

Enhancement mode eGaN FET technology providing robust switching capabilities
Integrated into half-bridge configurations for efficient power stage implementation
Optimized layout design to support high-speed switching performance

Applications

Evaluation of eGaN FET performance in half-bridge converter topologies
Integration into existing DC-DC or AC-DC converter designs
Development of power supply stages requiring low-voltage high-efficiency switching

Procurement Notes

Verify the specific package type and tape-and-reel specifications directly from the manufacturer's datasheet before ordering. Confirm that the intended application voltage does not exceed the 200 V rating. Ensure compatibility with the driving circuitry, such as the UCC27611 gate driver used in reference designs, to guarantee proper signal integrity and switching behavior during operation.

Selection Notes

Select the EPC2012C when designing systems requiring a 200 V rated enhancement mode GaN transistor with a 2 A current capability. This component is suitable for developers seeking to leverage eGaN technology for improved efficiency and reduced size compared to traditional silicon MOSFETs. Consider the availability of evaluation boards like the EPC9004C for initial prototyping and validation of switching characteristics before finalizing the design.

Part Context

The EPC2012C belongs to the EPC eGaN FET family, which utilizes gallium nitride technology to achieve superior power density and switching speeds. It is commonly paired with specialized gate drivers to form complete power stages. The device is frequently referenced in development kits such as the EPC9004C, which provides a standardized platform for assessing its performance in half-bridge configurations without requiring complex custom PCB layouts for initial testing.