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The EPC2016 is an enhancement mode eGaN FET with a maximum device voltage of 100V. It is designed for high-efficiency power conversion applications, offering low on-resistance and fast switching capabilities. The component utilizes gallium nitride technology to achieve superior performance compared to traditional silicon MOSFETs in similar voltage ratings.
Verify the specific suffix (e.g., C) against the datasheet to ensure correct pinout and electrical characteristics. Confirm package type matches the target footprint. Check RoHS compliance status if required by project specifications.
Select based on required voltage rating and current handling needs. Consider thermal management requirements given the power density. Ensure gate drive compatibility with the enhancement mode threshold voltages.
EPC2016 is part of the eGaN family from Efficient Power Conversion. It serves as a core component in evaluation boards like EPC9010 and EPC9126, demonstrating its utility in half-bridge and single-switch configurations for various power electronics designs.
No verified public substitute part numbers are available in the provided documentation.