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Product Detailed Parameters
- Description：GANFET N-CH 60V 90A DIE
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：90A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：2.2mOhm @ 31A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 16mA
- Gate Charge (Qg) (Max) @ Vgs：16 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：1780 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC2020 is an enhancement-mode Gallium Nitride (eGaN) power field-effect transistor manufactured by Efficient Power Conversion. It is designed for high-efficiency power conversion applications requiring low on-resistance and fast switching speeds. The device features a vertical current flow architecture, which minimizes parasitic inductance and improves thermal performance compared to planar devices. This component serves as the active semiconductor element within evaluation boards such as the EPC9033, facilitating the testing of power management circuits.
Feature Summary
- Utilizes eGaN FET technology for enhanced efficiency and reduced switching losses
- Vertical current flow structure provides superior thermal management capabilities
- Zero reverse recovery charge eliminates body diode conduction losses
- Low gate charge enables simplified driver requirements and high-frequency operation
Applications
- High-frequency DC-DC converters
- AC-DC adapters and chargers
- Class-D audio amplifiers
- Solar micro-inverters and optimizers
Procurement Notes
Verify the specific lot code and date code against the manufacturer's latest production status, as availability may vary. Confirm that the package type matches the intended PCB footprint and thermal design requirements. Ensure compliance with RoHS directives if required for the target market. Cross-reference the datasheet revision number to guarantee parameter consistency with existing designs.
Selection Notes
Select this component based on its voltage rating and on-resistance specifications relative to the target application's power density needs. Evaluate the thermal resistance characteristics to ensure adequate heat dissipation without excessive cooling infrastructure. Consider the gate drive voltage compatibility to optimize switching performance and minimize losses. Assess the package size constraints to determine suitability for compact form factors.
Part Context
The EPC2020 belongs to the eGaN FET family from Efficient Power Conversion, representing a shift from traditional silicon MOSFETs. It is commonly integrated into evaluation platforms like the EPC9033 to demonstrate high-performance power conversion topologies. This series supports designs aiming for higher efficiency and smaller physical footprints in modern electronic systems.
Replacement Considerations
Direct pin-to-pin replacements are limited due to unique eGaN characteristics. Verify functional equivalence by comparing breakdown voltage, on-resistance, and gate threshold parameters. Consult the manufacturer for recommended alternative part numbers that meet identical electrical and thermal specifications.
