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Product Detailed Parameters
- Description：GANFET N-CH 30V 60A DIE
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：1.3mOhm @ 40A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：2300 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC2023 is a gallium nitride (GaN) power transistor designed for high-efficiency switching applications. It features a normally-off enhancement-mode configuration with a low on-resistance and fast switching speeds, making it suitable for use in the EPC9201 half-bridge driver evaluation board alongside the EPC2015C device. The component supports operation within voltage ranges compatible with the 0 to 20 V output stage of the associated driver circuitry.
Feature Summary
- Enhancement-mode normally-off operation for safe default state
- High electron mobility channel for low conduction losses
- Optimized gate charge characteristics for high-frequency switching
Applications
- Evaluation of half-bridge driver circuits
- Power output stages requiring high current density
- High-frequency DC-DC converter topologies
Procurement Notes
Verify the specific tape-and-reel or tray packaging details directly with the manufacturer, as distribution listings may vary. Confirm that the device grade matches the thermal requirements of your target application. Ensure compatibility with the gate drive voltage levels specified in the official datasheet before integration into the final design.
Selection Notes
Select this component when designing circuits that require a robust, high-current GaN switch capable of operating at frequencies up to 1 MHz. Consider its package thermal performance and gate threshold voltage stability. Compare its total gate charge and output capacitance against alternative devices to optimize driver loss and switching speed for your specific efficiency targets.
Part Context
The EPC2023 is part of the Efficient Power Conversion (EPC) family of enhanced-mode GaN transistors. It is frequently paired with complementary devices like the EPC2015C in evaluation kits such as the EPC9201 to demonstrate balanced half-bridge performance. This context highlights its role in modern, compact power supply designs leveraging wide-bandgap semiconductor technology.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Direct replacement requires matching the pinout, voltage rating, and thermal characteristics precisely. Consult the manufacturer for qualified alternatives if supply constraints exist.
