EPC2034

$6.66

Description：GANFET N-CH 200V 48A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c1cc35a31474 Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：GANFET N-CH 200V 48A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：48A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：10mOhm @ 20A, 5V
Vgs(th) (Max) @ Id：2.5V @ 7mA
Gate Charge (Qg) (Max) @ Vgs：8.8 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：950 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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EPC2034

Overview

The EPC2034 is an enhancement mode Gallium Nitride (GaN) field-effect transistor manufactured by Efficient Power Conversion. It features a 200 V drain-to-source voltage rating and supports a continuous drain current of 48 A at 25°C ambient temperature with a thermal resistance of 3°C/W. The device exhibits a maximum on-resistance of 10 mΩ. Constructed as a bumped die in an uncased chip package, it utilizes standard CMOS processing infrastructure to leverage GaN’s high electron mobility and lateral structure for low gate charge and zero reverse recovery charge.

Feature Summary

Lateral device structure providing exceptionally low gate charge and zero reverse recovery charge
Low temperature coefficient enabling very low on-state resistance
Enhancement mode operation suitable for high switching frequency applications

Applications

High-frequency power conversion systems
Applications requiring low on-time and minimal on-state losses
Power stages where high switching efficiency is critical

Procurement Notes

Verify the specific package designation R-XXUC-X24 and bump configuration against the official datasheet before integration. Confirm that the thermal management design accounts for the specified 3°C/W junction-to-ambient thermal resistance under continuous operating conditions. Ensure compatibility with standard CMOS processing requirements if custom substrate integration is planned.

Selection Notes

Select this component when a 200 V rating and 48 A continuous current capability are required in a bare die format. Consider the lateral GaN structure for benefits in switching speed and reduced capacitive losses compared to traditional silicon MOSFETs. Evaluate the uncased chip packaging constraints regarding mechanical handling and thermal dissipation paths during PCB layout.

Part Context

The EPC2034 belongs to the eGaN FET family from Efficient Power Conversion, which utilizes gallium nitride grown on silicon wafers. This technology leverages established CMOS infrastructure to produce devices with superior electron mobility. The product line targets applications demanding high power density and efficiency through advanced semiconductor material properties.