EPC2039

Overview

The EPC2039 is an enhancement mode Gallium Nitride Field-Effect Transistor (GaN FET) from the eGaN® series, manufactured by Efficient Power Conversion. It is a single N-channel device packaged as a bumped die for surface mount applications. The component features a drain-source voltage rating of 80V and supports a continuous drain current of 6.8A at 25°C ambient temperature. Key electrical parameters include a maximum on-resistance of 25mΩ at 6A and 5V gate drive, a threshold voltage of 2.5V at 2mA, and a maximum gate charge of 2.4nC at 5V. The input capacitance is rated at 210pF at 40V, with a maximum operating junction temperature range of -40°C to 150°C.

Feature Summary

• Utilizes lateral GaN technology to achieve exceptionally low on-state resistance and zero reverse recovery charge due to the absence of minority carriers.
• Features an integrated reverse gate clamp diode to protect against negative gate-source voltage events.
• Designed for high switching frequency operation, enabling reduced passive component size and increased power density in compact designs.

Applications

• High-speed DC/DC converters
• Class D audio amplifiers
• Power inverters
• Wireless power transfer systems

Procurement Notes

Verify the specific package variant and tape-and-reel specifications required for your assembly process. Confirm that the design includes appropriate gate drive circuitry capable of handling the fast switching edges characteristic of GaN devices. Ensure PCB layout minimizes parasitic inductance in both power and gate loops to maintain stability and performance. Check for any recent product change notifications regarding manufacturing site or material composition updates.

Selection Notes

Select this component when designing circuits requiring high efficiency at elevated switching frequencies where silicon MOSFET limitations are reached. The 80V rating suits low-voltage power conversion stages. Consider the bumped die form factor, which requires specialized mounting techniques compared to standard packages. Evaluate thermal management strategies suitable for bare die or flip-chip implementations to ensure reliable operation within the specified temperature range.

Part Context

The EPC2039 belongs to the eGaN® family of transistors produced by Efficient Power Conversion. These devices leverage gallium nitride grown on silicon wafers using standard CMOS equipment. This technology combines the high electron mobility of GaN with the cost-effective infrastructure of silicon manufacturing, resulting in components that offer superior performance metrics over traditional silicon-based power switches.

Replacement Considerations

Direct pin-compatible replacements are not explicitly documented for this specific bumped die configuration. Designers should evaluate other eGaN FETs with similar voltage and current ratings, ensuring compatibility with existing gate drive requirements and PCB layout constraints. Cross-reference datasheets for equivalent Rds(on) and Qg values to maintain target efficiency levels.