EPC2045

$4.11

Description：GANFET N-CH 100V 16A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:723d29296102 Category: Single FETs, MOSFETs Brand: EPC

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Product introduction

Product Detailed Parameters

Description：GANFET N-CH 100V 16A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：16A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：7mOhm @ 16A, 5V
Vgs(th) (Max) @ Id：2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs：6.5 nC @ 5 V
Vgs (Max)：+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds：685 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：Die
Package / Case：Die

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EPC2045

Overview

The EPC2045 is a die-level N-channel eGaN FET from the Gen 5 family, rated for 100V drain-source voltage and 16A continuous drain current at ambient temperature. It features a maximum on-resistance of 7 milliohms at 5V gate drive and 16A. Key electrical parameters include a maximum gate charge of 6.5 nC at 5V, a threshold voltage of 2.5V at 5mA, and an input capacitance of 685 pF at 50V. The device operates within a junction temperature range of -40°C to 150°C and supports gate voltages up to +6V and down to -4V.

Feature Summary

Utilizes Gallium Nitride (GaN) technology for high-speed switching performance.
Designed as a bare die component for surface-mount integration.
Optimized for low conduction losses with minimal gate charge requirements.

Applications

High-frequency buck converter topologies
Half-bridge power stages
Evaluation of high-speed GaN transistor measurement techniques

Procurement Notes

Verify the specific ordering suffix required for your packaging preference, such as tape-and-reel or cut-tape formats, when sourcing from distributors. Confirm that the procurement channel provides the official manufacturer datasheet and relevant application notes to ensure correct handling and design-in procedures for this bare die component.

Selection Notes

Select the EPC2045 for designs requiring a 100V rating with high current capability in a compact form factor. Ensure the gate driver can support the specified voltage limits and provide sufficient current to manage the fast switching edges characteristic of eGaN devices. Consider thermal management strategies suitable for bare die mounting.

Part Context

This component belongs to the EPC Gen 5 eGaN FET family, which represents an evolution in gallium nitride power switching technology. The EPC2045 serves as a fundamental building block for advanced power conversion circuits, offering improved efficiency and power density compared to traditional silicon MOSFETs in similar voltage classes.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult the manufacturer's latest compatibility guides or engineering support for potential cross-reference options.