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Product Detailed Parameters
- Description：TRANS GAN 200V DIE 43MOHM
- Series：eGaN®
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：43mOhm @ 1A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：4.3 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：573 pF @ 100 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC2054 is an enhancement mode eGaN FET designed for high-frequency power conversion. It features a 100V drain-source voltage rating and low on-resistance, enabling efficient switching in compact designs. The device utilizes a leadless package to minimize parasitic inductance and capacitance, supporting applications requiring fast transient response and high thermal performance.
Feature Summary
- Enhancement mode operation for simplified gate drive requirements
- Low output capacitance for reduced switching losses
- Integrated body diode with optimized reverse recovery characteristics
Applications
- High-efficiency DC-DC converters
- Class D audio amplifiers
- LiDAR pulse generation circuits
Procurement Notes
Verify the specific tape-and-reel quantity and moisture sensitivity level (MSL) classification prior to ordering. Confirm that the manufacturing date code aligns with your assembly timeline to ensure solderability. Check for any specific handling instructions related to electrostatic discharge protection during storage and transport.
Selection Notes
Select this component when a 100V rating is sufficient and minimal gate charge is required. Compare total system losses against silicon MOSFETs at switching frequencies above 1MHz. Ensure the PCB layout supports the small footprint and thermal pad requirements for optimal heat dissipation.
Part Context
EPC2054 belongs to the eGaN FET family from Efficient Power Conversion. It represents a generation of gallium nitride devices aimed at replacing traditional silicon technologies in space-constrained, high-speed power electronics. The device is part of a broader portfolio including various voltage ratings and package options.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official EPC cross-reference guides for equivalent performance specifications.
