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Product Detailed Parameters
- Description：TRANS GAN DIE 100V .022OHM
- Series：-
- Mfr：EPC
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：23mOhm @ 3A, 5V
- Vgs(th) (Max) @ Id：2.5V @ 1.5mA
- Gate Charge (Qg) (Max) @ Vgs：2.5 nC @ 5 V
- Vgs (Max)：+6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds：386 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：Die
- Package / Case：Die
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Overview
The EPC2070 is an enhancement-mode Gallium Nitride (GaN) field-effect transistor from EPC. It features a drain-to-source voltage rating of 100 V and a continuous drain current of 1.7 A at ambient temperature. The device exhibits a typical on-resistance of 23 milliohms when driven at a gate-source voltage of 5 V. Output capacitance is specified at 82 pF, with a gate threshold voltage parameter included in official documentation. The component is packaged as a surface-mount die within a BGA footprint measuring 1.3 x 0.85 mm.
Feature Summary
- Utilizes eGaN FET technology for high-frequency power conversion
- Designed for surface mount assembly as a bare die
- Enhancement mode operation with low on-resistance characteristics
Applications
- High-frequency DC-DC converters
- Time-of-flight modules using VCSEL lasers for camera systems
- Applications in laptops and smart devices requiring compact power solutions
Procurement Notes
Verify the specific datasheet version and package details before procurement. Confirm that the BGA 1.3 x 0.85 mm footprint matches your PCB design requirements. Ensure compatibility with 5 V gate drive levels for optimal performance. Check for any recent product change notices regarding manufacturing sources or specifications.
Selection Notes
Select this component for designs requiring a 100 V rating and minimal footprint. The 1.7 A current capability suits moderate power applications. Consider thermal management strategies suitable for bare die mounting. Evaluate gate drive requirements to ensure the 5 V drive level is supported by the control circuitry.
Part Context
The EPC2070 belongs to the EPC eGaN FET family, which focuses on enhancing power density and efficiency. These transistors are engineered to replace traditional silicon MOSFETs in high-speed switching applications. The series emphasizes reduced parasitic capacitances and faster switching speeds.
Replacement Considerations
Consult official EPC documentation for direct substitutes. Verify pinout and electrical parameters match exactly. No public substitute part numbers are confirmed in the provided data.
