EPC2100

$7.93

Description：MOSFET 2N-CH 30V 10A DIE
Series：eGaN®

SKU:a2bd84ce5898 Category: FET, MOSFET Arrays Brand: EPC

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Product introduction

EPC2100 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists EPC. Its product description is MOSFET 2N-CH 30V 10A DIE. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for EPC2100

Description：MOSFET 2N-CH 30V 10A DIE
Series：eGaN®
Mfr：EPC
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：GaNFET (Gallium Nitride)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：10A (Ta), 40A (Ta)
Rds On (Max) @ Id, Vgs：8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Vgs(th) (Max) @ Id：2.5V @ 4mA, 2.5V @ 16mA
Gate Charge (Qg) (Max) @ Vgs：4.9nC @ 15V, 19nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds：475pF @ 15V, 1960pF @ 15V
Power - Max：-
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for EPC2100

EPC2100

FET, MOSFET Arrays Overview

The EPC2100 is an enhancement-mode GaN power transistor half-bridge die featuring a 30 V drain-to-source voltage rating. It integrates two N-channel eGaN FETs: Q1 with a maximum on-resistance of 8.2 mΩ and continuous current of 10 A, and Q2 with a maximum on-resistance of 2.1 mΩ and continuous current of 40 A. The device operates within a junction temperature range of -40°C to 150°C. Key electrical parameters include a gate threshold voltage of 2.5 V (max) and zero reverse recovery charge. The component is supplied in passivated die form with solder bumps for surface mount assembly.

FET, MOSFET Arrays Feature Summary

Zero reverse recovery charge enables high-frequency switching without body diode losses.
Lateral device structure provides exceptionally low gate charge for reduced switching energy.
Low temperature coefficient allows stable performance across varying thermal conditions.

FET, MOSFET Arrays Applications

High frequency DC-DC converters
Point-of-load (POL) converters

FET, MOSFET Arrays Procurement Notes

Verify the specific lot date code and manufacturing year indicated by the laser markings on the die before integration. Confirm that the receiving facility has appropriate moisture sensitivity level handling procedures, as the device is classified as MSL 1. Ensure the solder paste composition matches the recommended SAC305 Type 4 specification for optimal bump attachment.

FET, MOSFET Arrays Selection Notes

Select this component when designing compact half-bridge topologies requiring 30 V operation. Evaluate the thermal resistance values against your PCB copper pad area, as junction-to-ambient performance depends heavily on the mounting substrate. Consider the distinct current capabilities of Q1 and Q2 to optimize the duty cycle and load distribution within the circuit design.

FET, MOSFET Arrays Part Context

This component belongs to the Efficient Power Conversion eGaN family of enhancement-mode transistors. It utilizes Gallium Nitride grown on silicon wafers processed with standard CMOS equipment. The technology leverages high electron mobility to achieve low on-state resistance compared to traditional silicon MOSFETs.

FET, MOSFET Arrays Replacement Considerations

No official substitute part numbers are documented in the datasheet. Designers replacing silicon MOSFETs should utilize the EPC GaN Power Bench cross-reference tool to identify suitable alternatives based on specific operating conditions.