EPC2100ENGRT

FET, MOSFET Arrays Overview

The EPC2100ENGRT is an enhancement-mode Gallium Nitride (GaN) power transistor half-bridge die supplied in passivated form with solder bumps. It integrates two N-channel GaNFETs, designated Q1 and Q2, within a single package. The device features a drain-to-source voltage rating of 30 V. Q1 exhibits a maximum on-resistance of 8.2 mΩ at 5 V gate drive and a continuous current capacity of 10 A. Q2 provides a lower on-resistance of 2.1 mΩ and supports a continuous current of 40 A under specified thermal conditions. Both transistors operate with a gate-to-source voltage range of -4 V to +6 V and function across a junction temperature range of -40°C to 150°C.

FET, MOSFET Arrays Feature Summary

• Integration of two distinct N-channel GaN FETs (Q1 and Q2) into a single half-bridge configuration for compact power stage design.
• Utilization of lateral GaN structure and majority carrier conduction to achieve exceptionally low total gate charge and zero reverse recovery charge.
• Passivated die construction with integrated solder bumps designed for surface mount assembly onto printed circuit boards.

FET, MOSFET Arrays Applications

• High frequency DC-DC converters
• Point-of-load (POL) converter architectures

FET, MOSFET Arrays Procurement Notes

Verify the specific engineering revision status of the component prior to finalizing procurement plans. Confirm that the passive die format with solder bumps aligns with the intended assembly process and stencil specifications. Ensure that the supply chain documentation matches the exact part number suffix to guarantee compatibility with the required tape and reel dimensions and moisture sensitivity classifications.

FET, MOSFET Arrays Selection Notes

Select this component when designing high-density power stages requiring asymmetric current handling capabilities within a single half-bridge. The integration of a lower-current, higher-resistance switch alongside a high-current, low-resistance switch allows for optimized efficiency across varying load conditions. Consider the thermal resistance characteristics and recommended land patterns to ensure adequate heat dissipation for the specific application environment.

FET, MOSFET Arrays Part Context

The EPC2100 belongs to the eGaN® family of enhancement-mode power transistors manufactured by Efficient Power Conversion Corporation. This series leverages Gallium Nitride technology to replace traditional silicon MOSFETs in power conversion applications. The ENGRT suffix indicates the component is supplied as a bumped die in tape and reel packaging, facilitating automated surface-mount assembly processes.

FET, MOSFET Arrays Replacement Considerations

No official substitute part numbers are documented in the provided datasheet. When evaluating alternative components, verify that the replacement maintains compatible voltage ratings, gate drive requirements, and thermal performance characteristics. Ensure any cross-compatibility assessment accounts for the specific die-level packaging and assembly constraints inherent to this component type.