EPC2104

FET, MOSFET Arrays Overview

The EPC2104 is an enhancement-mode Gallium Nitride (GaN) power transistor configured as a half-bridge. It features a 100 V drain-to-source voltage rating and a maximum continuous drain current of 30 A at 25°C ambient temperature with a thermal resistance of 10°C/W. The device exhibits a typical on-resistance of 6.8 mΩ at VGS = 5 V and ID = 20 A. Dynamic characteristics include a total gate charge of 8.7 nC, input capacitance of 880 pF, and zero reverse recovery charge. Thermal management relies on a junction-to-case resistance of 0.3°C/W. The component is supplied as a passivated die with solder bumps in tape and reel packaging.

FET, MOSFET Arrays Feature Summary

• Lateral GaN structure providing exceptionally low gate charge and zero reverse recovery charge for high-frequency switching efficiency.
• Integrated half-bridge configuration containing two matched transistors within a single die package.
• Low thermal resistance enabling high power density and efficient heat dissipation in compact designs.

FET, MOSFET Arrays Applications

• High frequency DC-DC converters
• Motor drive inverters

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix to confirm the tape and reel configuration, as the datasheet specifies an 8 mm pitch, 12 mm wide tape on a 7-inch reel. Ensure compatibility with SAC305 Type 4 solder and laser-cut stencils during assembly. Confirm moisture sensitivity level classification before storage and handling procedures are finalized.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring high switching frequencies and minimal conduction losses. Evaluate the safe operating area curves against peak pulse currents, which reach 180 A for 300 µs pulses. Consider the 100 V breakdown limit when designing circuits with potential voltage overshoot or inductive kickback scenarios.

FET, MOSFET Arrays Part Context

The EPC2104 belongs to the eGaN FET family manufactured by Efficient Power Conversion Corporation. It utilizes Gallium Nitride grown on silicon wafers processed with standard CMOS equipment. This technology leverages high electron mobility to achieve low on-state resistance compared to traditional silicon MOSFETs.

FET, MOSFET Arrays Replacement Considerations

No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, ensure the replacement supports the same half-bridge topology, maintains comparable RDS(on) values, and fits the required die dimensions for existing land patterns.

FET, MOSFET Arrays FAQ

What is the recommended gate drive voltage for the EPC2104?

The datasheet specifies a typical gate drive ON voltage of 5 V. The OFF state is recommended at 0 V, although negative voltages up to -4 V are permitted.

Does the EPC2104 have a body diode?

Yes, the device includes a source-drain path with a forward voltage of 1.9 V at 0.5 A. However, it exhibits zero reverse recovery charge (QRR).

How is the EPC2104 packaged?

The device is supplied as a passivated die with solder bumps. It is available in an 8 mm pitch, 12 mm wide tape and reel format on a 7-inch reel.