EPC2105

FET, MOSFET Arrays Overview

The EPC2105 is an enhancement-mode Gallium Nitride (GaN) power transistor configured as a half-bridge. It integrates two N-channel GaNFETs on a single die with dimensions of 6.05 x 2.3 mm. The high-side device (Q1) features a maximum drain-to-source voltage (VDS) of 80 V, a continuous drain current (ID) of 10 A at 25°C, and a typical on-resistance (RDS(on)) of 14.5 mΩ. The low-side device (Q2) supports a continuous ID of 40 A with a typical RDS(on) of 3.6 mΩ under the same conditions. Both devices operate within a junction temperature range of -40°C to 150°C.

FET, MOSFET Arrays Feature Summary

• Lateral GaN device structure providing exceptionally low gate charge and zero reverse recovery charge.
• Integrated half-bridge configuration combining high-side and low-side transistors on a single passivated die.
• Low thermal resistance enabling efficient heat dissipation for high-density applications.

FET, MOSFET Arrays Applications

• High frequency DC-DC converters
• Power conversion systems requiring ultra-high efficiency
• Designs prioritizing high density footprint

FET, MOSFET Arrays Procurement Notes

Verify that the component is received in tape and reel format, as the EPC2105 is supplied exclusively in passivated die form with solder bumps. Confirm the presence of the orientation dot and check laser markings for lot date codes. Ensure handling procedures account for the bare die nature of the package to prevent damage during assembly.

FET, MOSFET Arrays Selection Notes

Select this component when a compact half-bridge solution is required for high-frequency operation. Consider the distinct current ratings between Q1 and Q2; Q1 is suited for lower current paths while Q2 handles higher currents. Evaluate the thermal management requirements based on the specified junction-to-board and junction-to-case thermal resistances for the target application environment.

FET, MOSFET Arrays Part Context

The EPC2105 belongs to the eGaN FET family manufactured by Efficient Power Conversion Corporation. It utilizes Gallium Nitride grown on silicon wafers processed with standard CMOS equipment. This technology leverages high electron mobility to achieve low on-resistance and fast switching speeds compared to traditional silicon MOSFETs.

FET, MOSFET Arrays Replacement Considerations

No official substitute part numbers are listed in the datasheet. When evaluating alternatives, ensure the replacement matches the 80 V rating and provides comparable thermal characteristics. Verify that the new component supports surface mount assembly via solder bumps or compatible land patterns if direct footprint substitution is intended.

FET, MOSFET Arrays FAQ

What is the recommended gate drive voltage for the EPC2105?

The datasheet specifies a gate-to-source voltage (VGS) of 5 V for measuring on-resistance and gate charge. The absolute maximum ratings allow for a positive VGS of 6 V and a negative VGS of -4 V.

How is the EPC2105 packaged?

The device is supplied only in passivated die form with solder bumps. It is packed in an 8 mm pitch, 12 mm wide tape on a 7-inch reel.

Does the EPC2105 have a body diode?

Yes, it features a majority carrier diode which results in zero reverse recovery charge (QRR).