EPC2108

FET, MOSFET Arrays Overview

The EPC2108 is an enhancement-mode gallium nitride (GaN) power transistor integrated circuit configured as a half-bridge with an integrated synchronous bootstrap driver. It contains three transistors: Q1 and Q2 form the half-bridge, while Q3 serves as the bootstrap diode. The device is supplied in passivated die form with solder bumps, measuring 1.35 mm x 1.35 mm. Key electrical parameters include a 60 V drain-to-source voltage rating for Q1/Q2, a maximum on-resistance of 240 mΩ at 5 V gate drive, and a continuous current capability of 1.7 A. Total gate charge is typically 310 pC.

FET, MOSFET Arrays Feature Summary

• Integrated synchronous bootstrap driver eliminates external bootstrap components
• Zero reverse recovery charge enables high-frequency switching without body diode losses
• Passivated die form factor supports ultra-small footprint designs

FET, MOSFET Arrays Applications

• High frequency DC-DC conversion
• Class-D audio amplifiers
• Wireless power transfer systems

FET, MOSFET Arrays Procurement Notes

Verify that the procurement channel supplies the component strictly in passivated die form with solder bumps, as discrete packages are not available for this part number. Confirm the moisture sensitivity level classification matches the datasheet specifications to ensure proper storage and handling protocols are followed during assembly.

FET, MOSFET Arrays Selection Notes

Select the EPC2108 when system design requires a compact half-bridge solution with integrated bootstrap functionality. The low gate charge and zero reverse recovery characteristics make it suitable for applications demanding high switching frequencies. Ensure the PCB layout accommodates the specific land pattern dimensions provided in the datasheet to maintain thermal performance.

FET, MOSFET Arrays Part Context

This component belongs to the eGaN FET family from Efficient Power Conversion Corporation. It utilizes lateral GaN technology to achieve superior switching speeds compared to silicon MOSFETs. The integration of the bootstrap driver within the die reduces the overall bill of materials and simplifies the design process for high-density power stages.

FET, MOSFET Arrays Replacement Considerations

No official substitute part numbers are documented by the manufacturer. Designers replacing other half-bridge solutions must account for differences in gate drive requirements and thermal resistance values. Verify that the replacement component supports the required operating temperature range and voltage ratings.