EPC2110ENGRT

FET, MOSFET Arrays Overview

The EPC2110ENGRT is a dual common-source enhancement-mode Gallium Nitride (GaN) power transistor supplied in passivated die form with solder bumps. It features a drain-to-source voltage rating of 120 V and a typical on-resistance of 110 mΩ at VGS = 5 V and ID = 4 A. The device supports a continuous drain current of 3.4 A at 25°C and a pulsed current of 20 A. Key dynamic characteristics include a total gate charge of 1.1 nC, input capacitance of 100 pF, and zero reverse recovery charge. Thermal performance includes a junction-to-case resistance of 3 °C/W and a junction-to-board resistance of 25 °C/W.

FET, MOSFET Arrays Feature Summary

• Dual common-source configuration allowing parallel connection or independent operation
• Lateral device structure providing exceptionally low gate charge and zero reverse recovery charge
• Passivated die form with solder bumps for surface mount assembly

FET, MOSFET Arrays Applications

• Ultra high frequency DC-DC conversion
• Wireless power transfer
• Synchronous rectification

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix ENGRT against the manufacturer's official documentation to confirm packaging details and availability status. Ensure that the procurement channel sources the component directly from authorized distributors to maintain quality assurance. Confirm that the received material matches the specified die marking and lot date code requirements before integration into production workflows.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring ultra-low gate charge and high switching frequencies due to its lateral GaN structure. Consider the thermal resistance values when designing heat dissipation strategies, as the junction-to-board resistance is 25 °C/W. Ensure the gate drive voltage remains within the specified range of -4 V to +6 V to prevent damage and optimize switching performance.

FET, MOSFET Arrays Part Context

The EPC2110 belongs to the eGaN® FET family from Efficient Power Conversion Corporation. It is designed as a bare die component intended for direct integration into printed circuit boards using recommended land patterns and stencil drawings provided in the datasheet. This form factor allows for compact power stage designs with minimized parasitic inductances.

FET, MOSFET Arrays Replacement Considerations

No official substitute part numbers are listed in the public documentation. When evaluating alternatives, ensure compatibility with the 120 V rating, 110 mΩ on-resistance, and the specific die dimensions of 1.35 x 1.35 mm. Verify that any replacement device supports the same common-source configuration and solder bump attachment method.